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this is information on a product in full production. december 2013 docid18353 rev 6 1/18 18 strh100n6 rad-hard n-channel, 60 v, 40 a power mosfet datasheet - production data figure 1. internal schematic diagram features ? fast switching ? 100% avalanche tested ? hermetic package ? 70 krad tid ? see radiation hardened applications ? satellite ? high reliability description this n-channel power mosfet is developed with stmicroelectronics unique stripfet? process. it has specifically been designed to sustain high tid and provide immunity to heavy ion effects.this power mosfet is fully escc qualified. note: contact st sales office for information about the specific conditions for product in die form and for other packages. to-254aa 1 2 3 v dss i d r ds(on) q g 60 v 40 a 12 m 134.4 nc table 1. device summary part numbers escc part number quality level package lead finish mass (g) temp. range eppl STRH100N6HY1 - engineering model to-254aa gold 10 -55 to 150 c - strh100n6hyg 5205/022/01 escc flight ta r g e t strh100n6hyt 5205/022/02 solder dip 10 - www.st.com
contents strh100n6 2/18 docid18353 rev 6 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 7.1 other information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
docid18353 rev 6 3/18 strh100n6 electrical ratings 1 electrical ratings (t c = 25 c unless otherwise specified) table 2. absolute maximum ratings (pre-irradiation) symbol parameter value unit v ds (1) 1. this rating is guaranteed @ t j 25 c (see figure 10: normalized bv dss vs temperature ). drain-source voltage (v gs = 0) 60 v v gs (2) 2. this value is guaranteed over the full range of temperature. gate-source voltage 20 v i d (3) 3. rated according to the rthj-case + rthc-s. drain current (continuous) at t c = 25 c 40 a i d (3) drain current (continuous) at t c = 100 c 25 a i dm (4) 4. pulse width limited by safe operating area. drain current (pulsed) 160 a p tot (3) total dissipation at t c = 25 c 176 w dv/dt (5) 5. i sd 40 a, di/dt 600 a/ s, v dd = 80 %v (br)dss. peak diode recovery voltage slope 2.5 v/ns t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit rthj-case thermal resistance junction-case max 0.50 c/w rthc-s case-to-sink typ 0.21 c/w
electrical ratings strh100n6 4/18 docid18353 rev 6 0 table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 40 a e as (1) 1. maximum rating value. single pulse avalanche energy (starting tj= 25 c, i d = i ar , v dd =40 v) 954 mj e as single pulse avalanche energy (starting tj= 110 c, i d = i ar , v dd =40 v) 280 mj e ar repetitive avalanche (v dd = 40 v, i ar = 40 a, f = 10 khz, t j = 25 c, duty cycle = 50%) 40 mj e ar repetitive avalanche (v dd = 40 v, i ar = 40 a, f = 100 khz, t j = 25 c, duty cycle = 10%) 24 mj repetitive avalanche (v dd = 40 v, i ar = 40 a, f = 100 khz, t j = 110 c, duty cycle = 10%) 7.7 mj
docid18353 rev 6 5/18 strh100n6 electrical characteristics 2 electrical characteristics (t c = 25c unless otherwise specified). pre-irradiation table 5. pre-irradation on/off states symbol parameter test conditions min. typ. max. unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss 10 a i gss gate body leakage current (v ds = 0) v gs = 20 v v gs = - 20 v -100 100 na na bv dss (1) 1. this rating is guaranteed @ t j 25 c (see figure 10: normalized bv dss vs temperature ). drain-to-source breakdown voltage v gs = 0 v, i d = 1 ma 60 v v gs(th) gate threshold voltage v ds =v gs , i d = 1 ma 2 4.5 v r ds(on) static drain-source on-resistance v gs = 12 v i d = 40 a 0.012 0.0135 table 6. pre-irradation dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 25 v, f=1mhz 3916 4895 5874 pf c oss (1) 1. this value is guaranteed over the full range of temperature. output capacitance 864 1080 1296 pf c rss reverse transfer capacitance 325 407 488 pf q g total gate charge v dd = 30 v, i d = 40 a, v gs =12 v 107 134.4 161 nc q gs gate-to-source charge 22 32.5 43 nc q gd gate-to-drain (?miller?) charge 34 46.5 59 nc r g (2) 2. not tested, guaranteed by process. gate input resistance f=1mhz gate dc bias=0 test signal level= 20 mv open drain 1.6 2 2.4
electrical characteristics strh100n6 6/18 docid18353 rev 6 table 7. pre-irradation switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 30 v, i d = 40 a, r g = 4.7 , v gs = 12 v 22 28 34 ns t r rise time 90 115 140 ns t d(off) turn-off-delay time 62 86 110 ns t f fall time 45 69 93 ns table 8. pre-irradation source drain diode (1) 1. refer to table 16: source drain diode . symbol parameter test conditions min. typ. max. unit i sd i sdm (2) 2. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) 40 160 a a v sd (3) 3. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 40 a, v gs = 0 1.1 v t rr (4) 4. not tested in production, guaranteed by process. reverse recovery time i sd = 40 a, di/dt = 100 a/ s v dd = 48 v, tj = 25 c 307 384 461 ns q rr (4) reverse recovery charge 4.7 c i rrm (4) reverse recovery current 24.6 a t rr (4) reverse recovery time i sd = 40 a, di/dt = 100 a/ s v dd = 48 v, tj = 150 c 370 462.4 55 ns q rr (4) reverse recovery charge 6.5 c i rrm (4) reverse recovery current 28.3 a
docid18353 rev 6 7/18 strh100n6 radiation characteristics 3 radiation characteristics the technology of stmicroelectronics rad-hard power mosfets is extremely resistant to radiative environments. every manufacturing lot is tested for total ionizing dose (irradiation done according to the escc 22900 specification, window 1.) using the to-3 package. both pre-irradiation and post-irradiation performance are tested and specified using the same circuitry and test conditions in order to provide a direct comparison. (t amb = 22 3 c unless otherwise specified). total dose radiation (tid) testing one bias conditions using the to-3 package: ?v gs bias: + 15 v applied and v ds = 0 v during irradiation the following parameters are measured (see table 9 , ta ble 10 and table 11 ): ? before irradiation ? after irradiation ? after 24 hrs @ room temperature ? after 168 hrs @ 100 c anneal table 9. post-irradiation on/off states @ t j = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss +10 a i gss gate body leakage current (v ds = 0) v gs = 20 v v gs = -20 v 1.5 -1.5 na bv dss drain-to-source breakdown voltage v gs = 0, i d = 1 ma -15% v v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma -60%/ + 25% v r ds(on) static drain-source on-resistance v gs = 10 v; i d = 40 a 15 % table 10. dynamic post-irradiation @ t j = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values unit q g total gate charge i g = 1 ma, v gs = 12 v, v ds = 30 v, i ds = 40 a -5% / +50% nc q gs gate-source charge 35 % q gd gate-drain charge -5% / +110%
radiation characteristics strh100n6 8/18 docid18353 rev 6 single event effect, soa the technology of the stmicroelectronics rad-hard power mosfets is extremely resistant to heavy ion environment for single event effect (irradiation per mil-std-750e, method 1080 bias circuit in figure 3: single event effect, bias circuit ) seb and segr tests have been performed with a fluence of 3e+5 ions/cm2 . the accept/reject criteria are: ? seb test: drain voltage checked, trigger level is set to v ds = - 2 v. stop condition: as soon as a seb occurs or if the fluence reaches 3e+5 ions/cm2. ? segr test: the gate current is monitored every 100 ms. a gate stress is performed before and after irradiation. stop condition: as soon as the gate current reaches 1 ma (during irradiation or during pigs test) or if the fluence reaches 3e+5 ions/cm2. the results are: ? seb immune at 60 mev/mg/cm 2 ? segr immune at 60 mev/mg/cm 2 within the safe operating area (soa) given in table 12: single event effect (see), safe operating area (soa) and figure 2: single event effect, soa table 11. source drain diode post-irradiation @ t j = 25 c, (co60 rays 70 k rad(si)) (1) 1. refer to figure 16 . symbol parameter test conditions drift values .unit v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 40 a, v gs = 0 5% v table 12. single event effect (see), safe operating area (soa) ion let (mev/(mg/cm 2 ) energy (mev) range (m) v ds (v) @v gs =0 @v gs = -2 v @v gs = -5 v @v gs = -10 v @v gs = -20 v kr 32 768 94 60 48 39 27 15 xe 60 1217 89 30 30 - - -
docid18353 rev 6 9/18 strh100n6 radiation characteristics figure 2. single event effect, soa figure 3. single event effect, bias circuit (a) a. bias condition during radiation refer to table 12: single event effect (see), safe operating area (soa) . 9gv9gvpd[ 9jv9 .u0h9fpepj 0h9?p5$'() ;h0h9fpepj0h9?p5$'() 5 5 & s) 8 9 jv & q) & ?) 9 gv $0y
electrical characteristics (curves) strh100n6 10/18 docid18353 rev 6 4 electrical characteristics (curves) figure 4. safe operating area figure 5. thermal impedance figure 6. output characteristics figure 7. transfer characteristics figure 8. gate charge vs gate-source voltage figure 9. capacitance variations i d 100 10 1 0 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100s 1ms 10ms dc am07261v1 i d 75 50 25 0 0 v ds (v) 4 (a) 2 100 125 150 8 6 12 10 v gs =10v 6v 5v hv32910 i d 10 1 3.5 4.5 v gs (v) 5.5 (a) 4.0 5.0 100 6.0 v ds = 1.3 v t j = +150 c t j = 25 c t j = -55 c am07260v1 v gs 8 4 0 0 20 q g (nc) (v) 80 40 60 12 v ds =30 v 100 120 i d =20 a i d =40 a am00892v1 c 3000 2000 1000 0 0 20 v ds (v) (pf) 10 4000 30 5000 6000 7000 40 50 ciss coss crss hv32930
docid18353 rev 6 11/18 strh100n6 electrical characteristics (curves) figure 10. normalized bv dss vs temperature figure 11. static drain-source on-resistance figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on resistance vs temperature figure 14. source drain-diode forward characteristics
test circuits strh100n6 12/18 docid18353 rev 6 5 test circuits figure 16. source drain diode figure 15. switching times test circuit for resistive load (1) 1. max driver v gs slope = 1v/ns (no dut) figure 17. unclamped inductive load test circuit (single pul se and repetitive) w uu e d >@ri, 50 glgw %rg\glrghuhyhuvhfxuuhqw, 50 , )0 erg\glrghiruzdugfxuuhqw $09
docid18353 rev 6 13/18 strh100n6 package mechanical data 6 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 13. to-254aa mechanical data dim. mm inch min. typ. max. min. typ. max. a 13.59 13.84 0.535 0.545 b 13.59 13.84 0.535 0.545 c 20.07 20.32 0.790 0.800 d 6.32 6.60 0.249 0.260 e 1.02 1.27 0.040 0.050 f 3.56 3.81 0.140 0.150 g 16.89 17.40 0.665 0.685 h 6.86 0.270 i 0.89 1.02 1.14 0.035 0.040 0.045 j 3.81 0.150 k 3.81 0.150 l 12.95 14.50 0.510 0.571 m 2.92 3.18 n0.71 r1 1.00 0.039 r2 1.52 1.65 1.78 0.060 0.065 0.070
package mechanical data strh100n6 14/18 docid18353 rev 6 figure 18. to-254aa drawing
docid18353 rev 6 15/18 strh100n6 order codes 7 order codes for specific marking only the complete structure is: ? st logo ? esa logo ? date code (date of sealing of the package) : yywwa ?yy: year ? ww: week number ? a: week index ? escc part number (as mentioned in the table) ? warning signs (e.g. beo) ? country of origin: fr (france) ? part serial number within in the assembly lot contact st sales office for information about the specific conditions for products in die form and for other packages. table 14. ordering information order codes escc part number quality level eppl package lead finish marking packing STRH100N6HY1 - engineer model - to-254aa gold strh100n6fsy1 + beo strip pack strh100n6hyg 5205/022/01 escc flight target 520502201f + beo strh100n6hyt 5205/022/02 - solder dip 520502202f + beo
order codes strh100n6 16/18 docid18353 rev 6 7.1 other information date code the date code for ?escc flight? is structured as follows: yywwz where: ? yy: last two digits of year ? ww: week digits ? z: lot index in the week documentation the table below provide a summary of the documentation provided with each type of products. table 15. summary of the documentation provided quality level radiation level documentation engineering model - - escc flight 70krad certificate of conformance radiation verification test report
docid18353 rev 6 17/18 strh100n6 revision history 8 revision history table 16. document revision history date revision changes 04-jan-2011 1 first release. 27-jul-2011 2 updated order codes in table 1: device summary and table 14: ordering information . minor text changes. 09-nov-2011 3 updated dynamic values on table 6: pre-irradation dynamic and table 7: pre-irradation switching times . 27-feb-2013 4 corrected i d value on: ? features ? table 2: absolute maximum ratings (pre-irradiation) ? table 5: pre-irradation on/off states ? table 6: pre-irradation dynamic ? table 8: pre-irradation source drain diode ? table 9: post-irradiation on/off states @ t j = 25 c, (co60 g rays 70 k rad(si)) ? table 10: dynamic post-irradiation @ t j = 25 c, (co60 g rays 70 k rad(si)) ? table 11: source drain diode post-irradiation @ t j = 25 c, (co60 g rays 70 k rad(si)) 02-jul-2013 5 updated table 1: device summary and table 14: ordering information . added chapter 7.1: other information . 16-dec-2013 6 modified: description minor text changes
strh100n6 18/18 docid18353 rev 6 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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